OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS

被引：48

作者：

BONNEFOI, AR ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

ANDERSON, GB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.98195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：344 / 346

页数：3

相关论文

共 14 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
BATEY, J
WRIGHT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209
[2] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BONNEFOI, AR
COLLINS, RT
MCGILL, TC
BURNHAM, RD
PONCE, FA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287
[3] CURRENT TRANSPORT MECHANISMS IN GAAS/ALAS TUNNEL STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
BONNEFOI, AR
CHOW, DH
MCGILL, TC
BURNHAM, RD
PONCE, FA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 988 - 995
[4] BONNEFOI AR, UNPUB
[5] CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[6] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[7] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HASE, I
KAWAI, H
KANEKO, K
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3792 - 3797
[8] MARSH AC, UNPUB IEEE J QUANTUM
[9] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES
MENDEZ, EE
WANG, WI
RICCO, B
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 415 - 417
[10] MENDEZ EE, UNPUB PHYS REV B