CURRENT TRANSPORT MECHANISMS IN GAAS/ALAS TUNNEL STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

BONNEFOI, AR ^{[1
]}

CHOW, DH ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

PONCE, FA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：988 / 995

页数：8

共 23 条

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[2] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
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[3] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287
[4] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
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[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
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ESAKI, L
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[6] INELASTIC TUNNELING CHARACTERISTICS OF ALAS GAAS HETEROJUNCTIONS
COLLINS, RT
LAMBE, J
MCGILL, TC
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 532 - 534
[7] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS
DELAGEBEAUDEUF, D
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ETIENNE, P
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[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 85 - 87
[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[9] TUNNELLING THROUGH VERY LOW BARRIERS
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KAUFMANN, U
MARCLAY, E
[J]. ELECTRONICS LETTERS, 1985, 21 (08) : 344 - 346
[10] ELECTRON-TRANSPORT THROUGH THE MOCVD GROWN GAAS/ALGAAS/GAAS HETEROJUNCTION BARRIER
HASE, I
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[J]. ELECTRONICS LETTERS, 1984, 20 (12) : 491 - 492

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