PREPARATION OF AGGAS2 FILMS BY EXCIMER-LASER DEPOSITION

被引：3

作者：

UCHIKI, H

MACHIDA, O

TANAKA, A

HIRASAWA, H

机构：

[1] Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, 940-21

[2] Department of Electrical Engineering, Oyama National College of Technology, Oyama, 323

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 6A期

关键词：

AGGAS2; THIN FILM; LASER DEPOSITION; XECL EXCIMER LASER; X-RAY DIFFRACTION; RAMAN SPECTRUM; TRANSMISSION SPECTRUM; PHOTOLUMINESCENCE SPECTRUM;

D O I：

10.1143/JJAP.32.L764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AgGaS2 thin films have been prepared on quartz substrates by means of XeCl excimer laser deposition from a mixture target of Ag2S and Ga2S3. Measurements of X-ray diffraction, Raman scattering, transmission and photoluminescence spectra show that the deposited films were chalcopyrite-type, polycrystalline AgGaS2 compound highly oriented in the [112] direction.

引用

页码：L764 / L766

页数：3

共 14 条

[11] INFRARED RADIATION TUNABLE FROM 5.5 TO 18.3 MU-M GENERATED BY MIXING IN AGGAS2 [J].