HIGH-QUALITY INGAAS/INP MULTI-QUANTUM-WELL STRUCTURES ON SI FABRICATED BY DIRECT BONDING

被引：23

作者：

MORI, K

TOKUTOME, K

NISHI, K

SUGOU, S

机构：

[1] Optoelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305, 34, Miyukigaoka

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 12期

关键词：

GALLIUM INDIUM ARSENIDE; INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; WAFTER BONDING;

D O I：

10.1049/el:19940657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality InGaAs/InP multiquantum-well (MQW) structures have been successfully fabricated on Si substrates by direct bonding. These structures were first grown on InP substrates, then bonded at 700-degrees-C on to Si substrates with buffer layers. The etch-pit densities of the InP surfaces are significantly low, approximately 10(4)cm-2, the lowest values ever reported- Furthermore, strong relative photoluminescence intensity from the MQW structures, over 70% of that before bonding, is obtained.

引用

页码：1008 / 1009

页数：2

共 5 条

[1]

LO HY, 1991, APPL PHYS LETT, V58, P472

[2]

LO HY, 1993, APPL PHYS LETT, V62, P1038

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