ELECTRICAL CHARACTERISTICS OF DIRECTLY-BONDED GAAS AND INP

被引：100

作者：

WADA, H

OGAWA, Y

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Higashiasakawa, Hachioji

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of directly bonded GaAs/InP heterointerfaces have been investigated for the first time. The mirror-polished surfaces of GaAs and InP wafers were put face to face and bonded by heat treatment at temperatures ranging from 450 to 700-degrees-C. The wafers were successfully bonded without using any solders at all the temperatures tested. 1.3 mum InP/GaInAsP lasers were fabricated on GaAs substrates using direct bonding at 450-degrees-C, and room-temperature lasing operation has been achieved with the threshold current identical to that of conventional InP lasers.

引用

页码：738 / 740

页数：3

共 13 条

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