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1ST CW OPERATION OF A GA0.25IN0.75AS0.5P0.5-INP LASER ON A SILICON SUBSTRATE
被引:99
作者
:
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RAZEGHI, M
[
1
]
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
DEFOUR, M
[
1
]
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BLONDEAU, R
[
1
]
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
OMNES, F
[
1
]
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MAUREL, P
[
1
]
ACHER, O
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
ACHER, O
[
1
]
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BRILLOUET, F
[
1
]
CFAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CFAN, JC
[
1
]
SALERNO, J
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
SALERNO, J
[
1
]
机构
:
[1]
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
来源
:
APPLIED PHYSICS LETTERS
|
1988年
/ 53卷
/ 24期
关键词
:
D O I
:
10.1063/1.100239
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2389 / 2390
页数:2
相关论文
共 9 条
[1]
FAN JCC, 1986, HETEROEPITAXY SI, V67
[2]
1ST ROOM-TEMPERATURE CW OPERATION OF A GAINASP-INP LIGHT-EMITTING DIODE ON A SILICON SUBSTRATE
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RAZEGHI, M
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BLONDEAU, R
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
DEFOUR, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
OMNES, F
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MAUREL, P
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BRILLOUET, F
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(10)
: 854
-
855
[3]
HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
OMNES, F
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
DEFOUR, M
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
MAUREL, P
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(03)
: 209
-
211
[4]
HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
RAZEGHI, M
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
MAUREL, P
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
OMNES, F
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
DEFOUR, M
BOOTHROYD, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
BOOTHROYD, C
STOBBS, WM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
STOBBS, WM
论文数:
引用数:
h-index:
机构:
KELLY, M
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(09)
: 4511
-
4514
[5]
1ST GAINASP-INP DOUBLE-HETEROSTRUCTURE LASER EMITTING AT 1.27 MU-M ON A SILICON SUBSTRATE
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RAZEGHI, M
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
DEFOUR, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
OMNES, F
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MAUREL, P
CHAZELAS, J
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CHAZELAS, J
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BRILLOUET, F
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(09)
: 725
-
727
[6]
RAZEGHI M, 1988, APR MAT RES SOC REN
[7]
RAZEGHI M, 1988, 4TH P INT C MET VAP
[8]
RAZEGHI M, 1988, AUG P SOL STAT DEV M, P363
[9]
SALERNO JP, 1988, 1988 P MAT RES SOC S
←
1
→
共 9 条
[1]
FAN JCC, 1986, HETEROEPITAXY SI, V67
[2]
1ST ROOM-TEMPERATURE CW OPERATION OF A GAINASP-INP LIGHT-EMITTING DIODE ON A SILICON SUBSTRATE
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RAZEGHI, M
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BLONDEAU, R
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
DEFOUR, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
OMNES, F
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MAUREL, P
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BRILLOUET, F
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(10)
: 854
-
855
[3]
HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
OMNES, F
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
DEFOUR, M
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
MAUREL, P
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(03)
: 209
-
211
[4]
HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
RAZEGHI, M
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
MAUREL, P
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
OMNES, F
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
DEFOUR, M
BOOTHROYD, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
BOOTHROYD, C
STOBBS, WM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND
STOBBS, WM
论文数:
引用数:
h-index:
机构:
KELLY, M
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(09)
: 4511
-
4514
[5]
1ST GAINASP-INP DOUBLE-HETEROSTRUCTURE LASER EMITTING AT 1.27 MU-M ON A SILICON SUBSTRATE
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RAZEGHI, M
DEFOUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
DEFOUR, M
OMNES, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
OMNES, F
MAUREL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MAUREL, P
CHAZELAS, J
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CHAZELAS, J
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
BRILLOUET, F
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(09)
: 725
-
727
[6]
RAZEGHI M, 1988, APR MAT RES SOC REN
[7]
RAZEGHI M, 1988, 4TH P INT C MET VAP
[8]
RAZEGHI M, 1988, AUG P SOL STAT DEV M, P363
[9]
SALERNO JP, 1988, 1988 P MAT RES SOC S
←
1
→