HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES

被引：28

作者：

RAZEGHI, M

OMNES, F

DEFOUR, M

MAUREL, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.99521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：209 / 211

页数：3

共 12 条

[1]

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[7] CW OPERATION OF 1.57-MU-M GAXIN1-XASYP1-YINP DISTRIBUTED FEEDBACK LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[10] CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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