GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：61

作者：

NISHI, S

INOMATA, H

AKIYAMA, M

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L391 / L393

页数：3

共 10 条

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[2]

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[4]

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[7]

ISHIDA T, 1984, 42ND ANN DEV RES C S

[8] HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

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NAGAI, K .

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[9] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS [J].

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[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

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