SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS

被引：84

作者：

NEAVE, JH

LARSEN, PK

JOYCE, BA

GOWERS, JP

VANDERVEEN, JF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：668 / 674

页数：7

相关论文

共 39 条

[1] THE MEASUREMENT OF INNER POTENTIAL FOR DIAMOND, GERMANIUM AND SILICON
ASHENFORD, DE
LISGARTEN, ND
[J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1983, 39 (MAY): : 311 - 314
[2] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[3] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[4] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES
BAUER, RS
MIKKELSEN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 491 - 497
[5] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[6] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
ZIMMERMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +
[7] REEXAMINATION OF THE SI(100) SURFACE RECONSTRUCTION
CHADI, DJ
[J]. APPLIED OPTICS, 1980, 19 (23): : 3971 - 3973
[8] INTERFACE MORPHOLOGY STUDIES OF(110)AND(111)GE-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, CA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (12) : 1037 - 1039
[9] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1253 - 1255
[10] GE-GAAS SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY
CHANG, CA
SEGMULLER, A
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 912 - 914

← 1 2 3 4 →