GE-GAAS SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

CHANG, CA

SEGMULLER, A

CHANG, LL

ESAKI, L

机构：

来源：

关键词：

D O I：

10.1063/1.92179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：912 / 914

页数：3

共 15 条

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[2] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
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HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[4] SUBSTRATE EFFECT ON THE LATTICE-CONSTANTS OF THE MBE-GROWN IN1-XGAXAS AND GASB1-YASY
CHANG, CA
SEGMULLER, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 285 - 287
[5] SEMICONDUCTOR SUPER-LATTICES BY MBE AND THEIR CHARACTERIZATION
CHANG, LL
ESAKI, L
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) : 3 - 14
[6] CHU WK, 1978, BACKSCATTERING SPECT, P116
[7] POLAR HETEROJUNCTION INTERFACES
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KRAUT, EA
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[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[8] Mendez E. E., 1980, Journal of the Physical Society of Japan, V49, P1009
[9] Milnes AG, 1972, HETEROJUNCTIONS META
[10] MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597