INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

CHANG, CA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1253 / 1255

页数：3

共 19 条

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[9]

CHANG CA, UNPUB

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