MOLECULAR-BEAM EPITAXY OF GE-GAAS SUPER-LATTICES

[1] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[2] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[4] GE-GAAS SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 912 - 914

[5] CHU WK, 1978, BACKSCATTERING SPECT, P116

[6] POLAR HETEROJUNCTION INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410

[7] ATOMIC RECONSTRUCTION AT POLAR INTERFACES OF SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 978 - 981

[8] Mendez E. E., 1980, Journal of the Physical Society of Japan, V49, P1009

[9] Milnes AG, 1972, HETEROJUNCTIONS META

[10] MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597

[1] SURFACE-REACTIONS AND INTERDIFFUSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153

[2] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[4] GE-GAAS SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 912 - 914

[5] CHU WK, 1978, BACKSCATTERING SPECT, P116

[6] POLAR HETEROJUNCTION INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410

[7] ATOMIC RECONSTRUCTION AT POLAR INTERFACES OF SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 978 - 981

[8] Mendez E. E., 1980, Journal of the Physical Society of Japan, V49, P1009

[9] Milnes AG, 1972, HETEROJUNCTIONS META

[10] MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597