LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES

被引：7

作者：

CHRISTOU, A

WILKINS, BR

TSENG, WF

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 09期

关键词：

D O I：

10.1049/el:19850289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：406 / 408

页数：3

共 9 条

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[3]

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[7] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].

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[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

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[9] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].

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