1ST GAINASP-INP DOUBLE-HETEROSTRUCTURE LASER EMITTING AT 1.27 MU-M ON A SILICON SUBSTRATE

被引：32

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

MAUREL, P ^{[1
]}

CHAZELAS, J ^{[1
]}

BRILLOUET, F ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：725 / 727

页数：3

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共 11 条

[1] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
BLONDEAU, R
KAZMIERSKI, K
KRAKOWSKI, M
DUCHEMIN, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 131 - 133
[2] CW OPERATION OF 1.57-MU-M GAXIN1-XASYP1-YINP DISTRIBUTED FEEDBACK LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
BLONDEAU, R
KAZMIERSKI, K
KRAKOWSKI, M
DECREMOUX, B
DUCHEMIN, JP
BOULEY, JC
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 784 - 788
[3] HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES
RAZEGHI, M
OMNES, F
DEFOUR, M
MAUREL, P
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 209 - 211
[4] CW PHASE-LOCKED ARRAY GA0.25IN0.75AS0.5P0.5-INP HIGH-POWER SEMICONDUCTOR-LASER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
BLONDEAU, R
KRAKOWSKI, M
DECREMOUX, B
DUCHEMIN, JP
LOZES, F
MARTINOT, M
BENSOUSSAN, MA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 230 - 232
[5] RAZEGHI M, 1985, SEMICONDUCTORS SEMIM, V22
[6] RAZEGHI M, 1987, SPIE J, V800, P18
[7] RAZEGHI M, 1988, APR P SPRING M MRS C
[8] RAZEGHI M, 1984, I PHYS C SER, V74, P679
[9] RAZEGHI M, 1988, IN PRESS 4TH P INT C
[10] ALGAAS/GAAS STRIPE LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD
SAKAI, S
SHIRAISHI, H
UMENO, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 1080 - 1084