HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

RAZEGHI, M

MAUREL, P

OMNES, F

DEFOUR, M

BOOTHROYD, C

STOBBS, WM

KELLY, M

机构：

[1] UNIV CAMBRIDGE,CAMBRIDGE CB2 3QZ,ENGLAND

[2] GEC RES LTD,WEMBLEY,ENGLAND

来源：

关键词：

D O I：

10.1063/1.340147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4511 / 4514

页数：4

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[4]

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