1ST ROOM-TEMPERATURE CW OPERATION OF A GAINASP-INP LIGHT-EMITTING DIODE ON A SILICON SUBSTRATE

被引：18

作者：

RAZEGHI, M ^{[1
]}

BLONDEAU, R ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

MAUREL, P ^{[1
]}

BRILLOUET, F ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：854 / 855

页数：2

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