EPITAXIAL GAAS GROWN DIRECTLY ON (100)SI BY LOW-PRESSURE MOVPE USING LOW-TEMPERATURE PROCESSING

被引：10

作者：

SHASTRY, SK

ZEMON, S

OREN, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90344-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：503 / 508

页数：6

共 12 条

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[7] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE [J].

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