HETERO-EPITAXIAL GROWTH OF INP ON SI SUBSTRATES BY LP-MOVPE

[1] GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 490 - 497

[2] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1725 - 1726

[3] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 389 - 397

[4] MOCVD GROWTH OF INP ON 4-INCH SI SUBSTRATE WITH GAAS INTERMEDIATE LAYER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1587 - L1589

[5] YAMAMOTO A, 1986, OPTOELECTRONICS DEVI, V1, P41

[1] GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 490 - 497

[2] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1725 - 1726

[3] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 389 - 397

[4] MOCVD GROWTH OF INP ON 4-INCH SI SUBSTRATE WITH GAAS INTERMEDIATE LAYER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1587 - L1589

[5] YAMAMOTO A, 1986, OPTOELECTRONICS DEVI, V1, P41