1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD

被引：43

作者：

RAZEGHI, M

DECREMOUX, B

DUCHEMIN, JP

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90440-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：389 / 397

页数：9

共 9 条

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[3] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J].

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DUCHEMIN, JP .

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[4] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :76-82

[5] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].

RAZEGHI, M ;

HERSEE, S ;

HIRTZ, P ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (09) :336-337

[6] AGING TEST OF MOCVD SHALLOW PROTON STRIPE GAINASP-INP, DH LASER DIODE EMITTING AT 1.5 MU-M [J].

RAZEGHI, M ;

HIRTZ, P ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (13) :481-483

[7]

RAZEGHI M, LIGHT WAVE TECHNOLOG

[8]

SUEMATSU Y, 1982, GAINASP ALLOY SEMICO

[9]

THOMPSON GHB, 1981, IEE P, V128, P2

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