STUDY OF FAULTS IN HETEROEPITAXIAL FILMS OF III-V MATERIALS BY METALLOGRAPHIC ANALYSIS ON THE CHEMICAL LEVEL

被引：4

作者：

HUBER, AM

LAURENCIN, G

RAZEGHI, M

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983448

中图分类号：

学科分类号：

摘要：

引用

页码：409 / 414

页数：6

共 13 条

[1]

ALJASSIM MM, 1981, I PHYS C SER, V60, P357

[2]

AUGUSTUS PD, FAL EL SOC M HOLL

[3] AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS [J].

BISARO, R ;

LAURENCIN, G ;

FRIEDERICH, A ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :978-980

[4] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].

HUBER, A ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84

[5]

HUBER AM, 1970, P INT S GAAS ACHEN, P118

[6]

LAURENCIN G, 1982, THESIS CNAM

[7]

MELLET R, COMMUNICATION

[8] MISFIT DISLOCATION-FREE IN1-XGAXAS1-YPY-INP HETEROSTRUCTURE WAFERS GROWN BY LIQUID-PHASE EPITAXY [J].

NAKAJIMA, K ;

YAMAZAKI, S ;

KOMIYA, S ;

AKITA, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4575-4582

[9] ELECTRICAL-PROPERTIES OF PLASTICALLY DEFORMED GAAS [J].

NAKATA, H ;

NINOMIYA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (02) :552-558

[10]

RAZEGHI M, 1983, REV THOMSON CSF, V1

← 1 2 →