GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES BY MOCVD

被引：67

作者：

AKIYAMA, M

KAWARADA, Y

UEDA, T

NISHI, S

KAMINISHI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90342-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：490 / 497

页数：8

共 35 条

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[7] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

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[8] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

FISCHER, R ;

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[9] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

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[10]

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