HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：36

作者：

LEE, MK

WUU, DS

TUNG, HH

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.97728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1725 / 1726

页数：2

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[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
[2] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS
GEIB, KM
GOODNICK, SM
LIN, DY
GANN, RG
WILMSEN, CW
WAGER, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 516 - 521
[3] OVERLENGTH MODES OF INP TRANSFERRED-ELECTRON DEVICES
JONES, D
REES, HD
[J]. ELECTRONICS LETTERS, 1974, 10 (12) : 234 - 235
[4] ADDUCTS IN THE GROWTH OF III-V-COMPOUNDS
MOSS, RH
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 78 - 87
[5] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SAKAI, S
SOGA, T
TAKEYASU, M
UMENO, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 413 - 414
[6] EPITAXIAL GAAS GROWN DIRECTLY ON (100)SI BY LOW-PRESSURE MOVPE USING LOW-TEMPERATURE PROCESSING
SHASTRY, SK
ZEMON, S
OREN, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 503 - 508
[7] WANG WI, 1984, APPL PHYS LETT, V44, P44