OHMIC CONTACTS TO PARA-TYPE INP USING BE-AU METALLIZATION

被引：44

作者：

TEMKIN, H

MCCOY, RJ

KERAMIDAS, VG

BONNER, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：444 / 446

页数：3

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