SYNTHESIS OF GAN BY N ION-IMPLANTATION IN GAAS(001)

被引：56

作者：

LIN, XW ^{[1
]}

BEHAR, M ^{[1
]}

MALTEZ, R ^{[1
]}

SWIDER, W ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91501 PORTO ALEGRE,RS,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both the hexagonal and cubic GaN phases were synthesized in GaAs (001) by 50 keV N ion implantation at 380 degrees C and subsequent furnace annealing at 850-950 degrees C for 10 min-2 h. For a fluence of 1.5 x 10(17) cm(-2), transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 3 X 10(17) cm(-2), a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. (C) 1995 American Institute of Physics.

引用

页码：2699 / 2701

页数：3

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