GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

被引：45

作者：

GUO, QX ^{[1
]}

OGAWA, H ^{[1
]}

YAMANO, H ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI,AICHI 441,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InN films have been grown on GaAs(111) and GaP(111) substrates using microwave-excited metalorganic vapor phase epitaxy. Trimethylindium and nitrogen were used as the source materials. It is revealed that epitaxial InN films can be obtained on GaAs (111) and GaP(111) by exposing the substrate to nitrogen plasma before the growth and that the crystalline quality of the InN films is strongly dependent on exposing time. All films have a wurtzite structure and display the InN(0001)// GaAs(111), InN(0001)//GaP(111) orientation.© 1995 American Institute of Physics.

引用

页码：715 / 717

页数：3

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