HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY

[1] PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1430 - 1433

[2] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[3] Crystal structures of Cu3N, GaN and InN - Metallic amides and metallic nitrides V Announcement [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1938, 239 (03): : 282 - 287

[4] THERMAL STABILITY OF INDIUM NITRIDE AT ELEVATED TEMPERATURES AND NITROGEN PRESSURES [J]. MATERIALS RESEARCH BULLETIN, 1970, 5 (09) : 783 - +

[5] MADELUNG O, 1982, LANDOLTBORNSTEIN, V17, P278

[6] Marasina L. A., 1977, Kristall und Technik, V12, P541, DOI 10.1002/crat.19770120603

[7] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J]. THIN SOLID FILMS, 1980, 69 (02) : 201 - 216

[8] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3432 - 3437

[9] TAKAI O, 1982, 7TH P INT C VAC MET, P137

[10] OPTICAL BAND-GAP OF INDIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3241 - 3244

[1] PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1430 - 1433

[2] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[3] Crystal structures of Cu3N, GaN and InN - Metallic amides and metallic nitrides V Announcement [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1938, 239 (03): : 282 - 287

[4] THERMAL STABILITY OF INDIUM NITRIDE AT ELEVATED TEMPERATURES AND NITROGEN PRESSURES [J]. MATERIALS RESEARCH BULLETIN, 1970, 5 (09) : 783 - +

[5] MADELUNG O, 1982, LANDOLTBORNSTEIN, V17, P278

[6] Marasina L. A., 1977, Kristall und Technik, V12, P541, DOI 10.1002/crat.19770120603

[7] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J]. THIN SOLID FILMS, 1980, 69 (02) : 201 - 216

[8] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3432 - 3437

[9] TAKAI O, 1982, 7TH P INT C VAC MET, P137

[10] OPTICAL BAND-GAP OF INDIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3241 - 3244