CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES

被引:3414
作者
NAKAMURA, S
MUKAI, T
SENOH, M
机构
[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774
关键词
D O I
10.1063/1.111832
中图分类号
O59 [应用物理学];
学科分类号
摘要
Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 muW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
引用
收藏
页码:1687 / 1689
页数:3
相关论文
共 19 条