CD-DOPED INGAN FILMS GROWN ON GAN FILMS

被引：23

作者：

NAKAMURA, S

IWASA, N

NAGAHAMA, S

机构：

[1] Department of Research and Development, Nichia Chemical Industries Ltd., Kaminaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 3A期

关键词：

CD-DOPED INGAN; GAN; BLUE EMISSION; LED; PHOTOLUMINESCENCE; BAND-EDGE EMISSION;

D O I：

10.1143/JJAP.32.L338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cd-doped InGaN films were grown for the first time at temperatures between 810-degrees-C and 780-degrees-C. Room-temperature photoluminescence (PL) showed strong blue emissions which had peak wavelengths between 424 nm and 495 nm, depending on the indium mole fraction, and full width at half-maximum (FWHM) of about 60 nm. These blue emissions had a peak wavelength at an energy level 0.5 eV lower than the band-gap energy of each InGaN. The intensity of the Cd-related emission was almost the same as that of the band-edge (BE) emission of Si-doped InGaN.

引用

页码：L338 / L341

页数：4

共 18 条

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