ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN

被引：344

作者：

JENKINS, DW ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV NOTRE DAME, DEPT PHYS, NOTRE DAME, IN 46556 USA

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.39.3317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3317 / 3329

页数：13

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