ROLE OF DANGLING BONDS AND ANTISITE DEFECTS IN RAPID AND GRADUAL III-V LASER DEGRADATION

[1] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[2] BUISSON JP, UNPUB SOLID STATE CO

[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[4] DOBSON PS, 1977, I PHYS C SER A, V33, P419

[5] Hayashi I., 1980, Journal of the Physical Society of Japan, V49, P57

[6] HERSEE SD, 1976, GALLIUM ARSENIDE REL, P370

[7] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813

[8] HJALMARSON HP, UNPUB, P94108

[9] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1597 - 1615

[10] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (04): : 745 - 754

[1] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[2] BUISSON JP, UNPUB SOLID STATE CO

[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[4] DOBSON PS, 1977, I PHYS C SER A, V33, P419

[5] Hayashi I., 1980, Journal of the Physical Society of Japan, V49, P57

[6] HERSEE SD, 1976, GALLIUM ARSENIDE REL, P370

[7] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (12) : 810 - 813

[8] HJALMARSON HP, UNPUB, P94108

[9] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1597 - 1615

[10] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (04): : 745 - 754