NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE

被引：110

作者：

HSU, WY

DOW, JD

WOLFORD, DJ

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[4] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.16.1597

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1597 / 1615

页数：19

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