NITROGEN IMPLANTATION IN GAAS1-XPX .2. ANNEALING PROPERTIES

被引：11

作者：

ANDERSON, RE ^{[1
]}

WOLFORD, DJ ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.324009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2453 / 2462

页数：10

共 30 条

[1]

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[7] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

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[8] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

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[9]

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[10]

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