PROMOTION OF RADIATIVE RECOMBINATION IN GAAS1-XPX BY N-ION IMPLANTATION

被引:5
作者
GONDA, SI [1 ]
MAKITA, Y [1 ]
MAEKAWA, S [1 ]
机构
[1] ELECTROTECH LAB,FUNDAMENTAL SCI DIV,ELECTR PHYS SECT,5-4-1 MUKODAI MACHI,TANASHI,TOKYO,JAPAN
关键词
D O I
10.1109/T-ED.1975.18208
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:712 / 716
页数:5
相关论文
共 12 条
[1]  
Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8
[2]   PHOTOLUMINESCENCE OF INDIRECT-BAND-GAP GAAS1-XPX(X=0.52)IMPLANT WITH NITROGEN IONS [J].
GONDA, S ;
MAKITA, Y ;
MAEKAWA, S ;
TANOUE, H ;
TSURUSHI.T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1483-1484
[3]  
GONDA S, 1973, 4TH RIK S ION IMPL S, P27
[4]  
GONDA S, 1974, 5TH RIK S ION IMPL S, P23
[5]   STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44) [J].
HOLONYAK, N ;
SCIFRES, DR ;
CRAFORD, MG ;
GROVES, WO ;
KEUNE, DL .
APPLIED PHYSICS LETTERS, 1971, 19 (08) :256-&
[6]   SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J].
HOLONYAK, N ;
DUPUIS, RD ;
MACKSEY, HM ;
GROVES, WO ;
CRAFORD, MG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4148-&
[7]   ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE [J].
KACHARE, AH ;
KAHAN, A ;
EULER, FK ;
WHATLEY, TA ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4393-4399
[8]   ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36) [J].
MAKITA, Y ;
GONDA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :565-566
[9]   HOT IMPLANTATION OF NITROGEN IONS INTO GAAS1-XPX (X = 0.36) [J].
MAKITA, Y ;
GONDA, S ;
TANOUE, H ;
TSURUSHIMA, T ;
MAEKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :563-564
[10]   LUMINESCENCE AND OPTICAL ABSORPTION OF IMPLANTED NITROGEN IN GAP [J].
MERZ, JL ;
SADOWSKI, EA ;
RODGERS, JW .
SOLID STATE COMMUNICATIONS, 1971, 9 (13) :1037-&