STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44)

被引：32

作者：

HOLONYAK, N

SCIFRES, DR

CRAFORD, MG

GROVES, WO

KEUNE, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 08期

关键词：

D O I：

10.1063/1.1653908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：256 / &

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[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[2] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[3] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[4] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
GROVES, WO
HERZOG, AH
CRAFORD, MG
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 184 - &
[5] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1830 - &
[6] STIMULATED EMISSION INVOLVING NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX
HOLONYAK, N
SCIFRES, DR
BURNHAM, RD
CRAFORD, MG
GROVES, WO
HERZOG, AH
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 254 - &
[7] HOLONYAK N, 1964, T METALL SOC AIME, V230, P276
[8] INTERFERENCE BETWEEN INTERMEDIATE STATES IN OPTICAL PROPERTIES OF NITROGEN-DOPED GALLIUM PHOSPHIDE
HOPFIELD, JJ
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1967, 158 (03): : 748 - &
[9] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS
LOGAN, RA
WHITE, HG
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &
[10] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X
PILKUHN, M
RUPPRECHT, H
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &