ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X

被引：44

作者：

PILKUHN, M

RUPPRECHT, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 3P1期

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D O I：

10.1063/1.1714202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：684 / &

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[1] HIGH-ENERGY LIGHT EMMISSION FROM JUNCTIONS IN GAASXP1-X DIODES
AINSLIE, N
RUPPRECHT, H
PILKUHN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 105 - &
[2] P-N JUNCTION LASERS
BURNS, G
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER
BURNS, G
DILL, FH
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &
[4] APPARATUS FOR LIGHT EFFICIENCY MEASUREMENT
CHEROFF, G
TRIEBWASSER, S
LANZA, C
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (10) : 1138 - &
[5] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS
CHEROFF, G
STERN, F
TRIEBWASSER, S
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174
[6] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS
EHRENREICH, H
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &
[7] FENNER GE, 1964, PHYS REV, V134, P1113
[8] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE
GERSHENZON, M
MIKULYAK, RM
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &
[9] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES
GERSHENZON, M
MIKULYAK, RM
LOGAN, RA
FOY, PW
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 113 - 124
[10] THE DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) P-N JUNCTIONS
HOLONYAK, N
BEVACQUA, SF
BIELAN, CV
LUBOWSKI, SJ
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 47 - 49