PHOTOLUMINESCENCE OF INDIRECT-BAND-GAP GAAS1-XPX(X=0.52)IMPLANT WITH NITROGEN IONS

被引：12

作者：

GONDA, S ^{[1
]}

MAKITA, Y ^{[1
]}

MAEKAWA, S ^{[1
]}

TANOUE, H ^{[1
]}

TSURUSHI.T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 09期

关键词：

D O I：

10.1143/JJAP.13.1483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1483 / 1484

页数：2

相关论文

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[2] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
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[3] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N
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[4] HOT IMPLANTATION OF NITROGEN IONS INTO GAAS1-XPX (X = 0.36)
MAKITA, Y
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 563 - 564
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