DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO

被引：251

作者：

KOBAYASHI, A

SANKEY, OF

DOW, JD

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.28.946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：946 / 956

页数：11

共 33 条

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