ELECTRICAL BREAKDOWN AT SEMICONDUCTOR GRAIN-BOUNDARIES

被引：143

作者：

BLATTER, G

GREUTER, F

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8555

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8555 / 8572

页数：18

共 64 条

[1] SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS [J].

ALIG, RC ;

BLOOM, S ;

STRUCK, CW .

PHYSICAL REVIEW B, 1980, 22 (12) :5565-5582

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[3] BALLISTIC ELECTRONS IN AN INHOMOGENEOUS SUB-MICRON STRUCTURE - THERMAL AND CONTACT EFFECTS [J].

BARANGER, HU ;

WILKINS, JW .

PHYSICAL REVIEW B, 1984, 30 (12) :7349-7351

[4]

BAYM G, 1973, LECTURES QUANTUM MEC, P213

[5]

BERNASCONI J, 1977, SOLID STATE COMMUN, V21, P867, DOI 10.1016/0038-1098(77)90351-9

[6] INVESTIGATION OF VARIOUS MODELS FOR METAL-OXIDE VARISTORS [J].

BERNASCONI, J ;

KLEIN, HP ;

KNECHT, B ;

STRASSLER, S .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (05) :473-495

[7] CARRIER TRANSPORT THROUGH GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].

BLATTER, G ;

GREUTER, F .

PHYSICAL REVIEW B, 1986, 33 (06) :3952-3966

[8]

BLATTER G, 1985, SPRINGER SERIES SOLI, V57

[9]

BOURRET A, 1985, SPRINGER SERIES SOLI, V57

[10]

Bube R.H., 1960, PHOTOCONDUCTIVITY SO

← 1 2 3 4 5 6 7 →