SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS

被引:257
作者
ALIG, RC
BLOOM, S
STRUCK, CW
机构
关键词
D O I
10.1103/PhysRevB.22.5565
中图分类号
T [工业技术];
学科分类号
08 [工学];
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页码:5565 / 5582
页数:18
相关论文
共 65 条
[1]
ELECTRON-HOLE-PAIR CREATION ENERGIES IN SEMICONDUCTORS [J].
ALIG, RC ;
BLOOM, S .
PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1522-1525
[2]
SECONDARY ELECTRON-ESCAPE PROBABILITIES [J].
ALIG, RC ;
BLOOM, S .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3476-3480
[3]
CATHODOLUMINESCENT EFFICIENCY [J].
ALIG, RC ;
BLOOM, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1136-1138
[4]
THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].
ANDERSON, CL ;
CROWELL, CR .
PHYSICAL REVIEW B, 1972, 5 (06) :2267-&
[5]
ON THEORY OF QUANTUM EFFICIENCY IN GERMANIUM [J].
ANTONCIK, E .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) :157-&
[6]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J].
AUSMAN, GA ;
MCLEAN, FB .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :173-175
[7]
DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[8]
HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].
BARTELINK, D ;
MOLL, JL ;
MEYER, NI .
PHYSICAL REVIEW, 1963, 130 (03) :972-+
[9]
FANO FACTOR IN GERMANIUM AT 77 DEGREES K [J].
BILGER, HR .
PHYSICAL REVIEW, 1967, 163 (02) :238-+
[10]
MEASUREMENTS OF AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWEEN 5-320 DEGREES [J].
CANALI, C ;
QUARANTA, AA ;
MARTINI, M ;
OTTAVIANI, G .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (04) :9-+