MEASUREMENTS OF AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWEEN 5-320 DEGREES

被引：37

作者：

CANALI, C

QUARANTA, AA

MARTINI, M

OTTAVIANI, G

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 04期

关键词：

D O I：

10.1109/TNS.1972.4326778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：9 / +

页数：1

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