SYNTHESIS AND ELECTRICAL CHARACTERIZATION OF BORON-DOPED THIN DIAMOND FILMS

被引：32

作者：

MASOOD, A ^{[1
]}

ASLAM, M ^{[1
]}

TAMOR, MA ^{[1
]}

POTTER, TJ ^{[1
]}

机构：

[1] FORD MOTOR CO,RES STAFF,DEARBORN,MI 48121

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterned semiconducting polycrystalline diamond films have been synthesized by hot-filament CVD using in situ doping by pure boron powder. P-type conduction was confirmed by both Hall and Seebeck effects. The quality of deposited films, as determined by SEM and Raman spectroscopy, was unaffected by the doping. The resistivity and Hall mobility measured by the Van der Pauw method were in the range of 20-100 OMEGA cm and 2-32 cm2 V-1 s-1, respectively. The dopant activation energies, as computed from the resistivity versus temperature curves (up to 300-degrees-C), were in the range of 0.38-0.30 eV corresponding to Hall concentration in the range of 9 X 10(15)-2 X 10(17) cm-3 and boron concentration in the range of 10(17)-10(21) cm-3. The estimated impurity concentration is consistent with SIMS results.

引用

页码：1832 / 1834

页数：3

共 17 条

[1]

COLLINS AT, 1989, MATER RES SOC S P, V162, P3

[2]

COLLINS AT, 1970, DIAMOND RES, P19

[3] SYNTHETIC DIAMOND MICROMECHANICAL MEMBRANES, CANTILEVER BEAMS, AND BRIDGES [J].