BINDING-SITES AND DIFFUSION-BARRIERS OF SINGLE-HEIGHT SI(001) STEPS

被引：52

作者：

ROLAND, C

GILMER, GH

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.67.3188

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using molecular-dynamics simulations, we have mapped out the potential-energy surface of a Si adatom over the S(A) and S(B) Si(001) steps. This identifies the likely binding sites for step growth and provides estimates for the diffusion barriers over the step edges. We find that the barriers at the step edge do not differ substantially from those on the flat terraces. Surprisingly, the S(A) and rebonded S(B) steps are only weak sinks for adatoms. In contrast, the nonbonded S(B) step is a good sink.

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页码：3188 / 3191

页数：4

相关论文

共 22 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].

ALERHAND, OL ;

VANDERBILT, D ;

MEADE, RD ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1988, 61 (17) :1973-1976

[2] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].

ALERHAND, OL ;

BERKER, AN ;

JOANNOPOULOS, JD ;

VANDERBILT, D ;

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2406-2409

[3] BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE [J].

BROCKS, G ;

KELLY, PJ ;

CAR, R .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1729-1732

[4] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[5] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[6] ANALYSIS OF COMBINED SURFACE AND VOLUME DIFFUSION PROCESSES IN CRYSTAL GROWTH [J].

GILMER, GH ;

GHEZ, R ;

CABRERA, N .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) :79-+

[7] THE ATOMIC-STRUCTURE OF VICINAL SI(001) AND GE(001) [J].

GRIFFITH, JE ;

KOCHANSKI, GP .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (04) :255-289

[8] SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

HOEVEN, AJ ;

LENSSINCK, JM ;

DIJKKAMP, D ;

VANLOENEN, EJ ;

DIELEMAN, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1830-1832

[9] UHV-REM STUDY OF CHANGES IN THE STEP STRUCTURES ON CLEAN (100) SILICON SURFACES BY ANNEALING [J].

INOUE, N ;

TANISHIRO, Y ;

YAGI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (04) :L293-L295

[10]

LAGALLY MG, 1989, KINETICS ORDERING GR