REVERSIBLE FLOATING-GATE MEMORY

被引：10

作者：

CARD, HC

WORRALL, AG

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER 1,ENGLAND

[2] FERRANTI LTD,MANCHESTER 22,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.1662559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2326 / 2330

页数：5

共 11 条

[1] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J].

FROHMANB.D .

APPLIED PHYSICS LETTERS, 1971, 18 (08) :332-&

[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[3]

Kahng D., 1967, BELL SYST TECH J, V46, P1283

[4] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[5] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[6] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

NICOLLIAN, EH ;

GOETZBERGER, A ;

BERGLUND, CN .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :174-+

[7]

SZE SM, 1967, J APPL PHYS, V38, P1951

[8]

TARUI Y, 1972 ISSCC C U PENN

[9]

VERWEY JF, 1971, PHILIPS RES REP, V26, P382

[10] INTRODUCTION OF CHARGE IN SIO2 AND INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORS [J].

VERWEY, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (08) :270-+

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