TRANSIT-TIME OSCILLATIONS IN BARITT DIODES

被引：29

作者：

COLEMAN, DJ

机构：

来源：

关键词：

D O I：

10.1063/1.1661400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1812 / &

共 9 条

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[2]

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[3]

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[4]

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[5] CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES [J].

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11) :2065-&

[6]

RUEGG HW, 1968, IEEE T, VED15, P577

SHEOREY, UB ;

LUNDSTROM, I ;

ASH, EA .

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES [J].

SZE, SM ;

COLEMAN, DJ ;

LOYA, A .

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8