CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +

[2] CICCOLELLA DF, 1969, INT ELECTRON DEVIC M

[3] AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 225 - +

[4] PLANAR EPITAXIAL SILICON SCHOTTKY BARRIER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (07): : 1525 - +

[5] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +

[2] CICCOLELLA DF, 1969, INT ELECTRON DEVIC M

[3] AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 225 - +

[4] PLANAR EPITAXIAL SILICON SCHOTTKY BARRIER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (07): : 1525 - +

[5] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO