LATTICE-DEFECTS IN SEMICONDUCTING HG1-XCDXTE ALLOYS .2. DEFECT STRUCTURE OF INDIUM-DOPED HG0.8CD0.2TE

被引：56

作者：

VYDYANATH, HR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 12期

关键词：

D O I：

10.1149/1.2127315

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2619 / 2625

页数：7

共 10 条

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[8] LATTICE-DEFECTS IN SEMICONDUCTING HG1-XCDXTE ALLOYS .1. DEFECT STRUCTURE OF UNDOPED AND COPPER DOPED HG0.8CD0.2TE [J].

VYDYANATH, HR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) :2609-2619

[9] IODINE AS A DONOR IN CDS [J].

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[10] EFFECTS OF SOLID SOLUTION OF IN2TE3 WITH AIIBVI TELLURIDES [J].

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