DIELECTRIC GRATING INDUCED BY CAVITY STANDING WAVE AS A NEW EXPLANATION OF ORIGIN OF NONLINEAR GAIN IN SEMICONDUCTOR DIODE-LASERS

被引：34

作者：

SU, CB

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 07期

关键词：

D O I：

10.1049/el:19880250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：370 / 371

页数：2

共 12 条

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[6]

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[9] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].

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SU, CB .

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LAUER, RB .

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