THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS

被引：201

作者：

MANNING, J

OLSHANSKY, R

SU, CB

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 10期

关键词：

D O I：

10.1109/JQE.1983.1071749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1525 / 1530

页数：6

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