NITROGEN-OXYGEN COMPLEXES IN CZOCHRALSKI-SILICON

被引：84

作者：

WAGNER, P

OEDER, R

ZULEHNER, W

机构：

[1] WACKER CHEM GMBH,D-8236 BURGHAUSEN,FED REP GER

[2] WACKER CHEMITRON GMBH,D-8263 BURGHAUSEN,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 02期

关键词：

D O I：

10.1007/BF00615911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：73 / 76

页数：4

共 8 条

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BEAN, AR ;

NEWMAN, RC .

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BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

[4] THEORY OF VIBRATIONS OF PAIRS OF DEFECTS IN SILICON [J].

ELLIOTT, RJ ;

PFEUTY, P .

[5]

ITOH Y, 1987, APPL PHYS LETT, V57, P488

[6]

OEDER R, 1983, MATERIALS RES SOC S, V14

[7]

STEIN HJ, 1985, J ELECTRON MATER A, V14, P839

[8]

WATANABE M, 1981, SEMICONDUCTOR SILICO, P126