JUNCTIONS BETWEEN AMORPHOUS AND CRYSTALLINE SILICON

[1] ANDERSSON LP, 1977, VACCUUM, V28, P5

[2] Brodsky M. H., 1975, Critical Reviews in Solid State Sciences, V5, P591, DOI 10.1080/10408437508243516

[3] DOHLER GH, P C TETRAHEDRICALLY, P351

[4] Fuhs W., 1974, P INT C TETRAHEDRALL, P345

[5] INVESTIGATIONS OF METAL CONTACTS TO AMORPHOUS EVAPORATED GE FILMS [J]. VACUUM, 1977, 27 (03) : 193 - 195

[6] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50

[7] BEHAVIOR OF AMORPHOUS-GE CONTACTS TO MONOCRYSTALLINE SILICON [J]. VACUUM, 1977, 27 (03) : 201 - 208

[8] RHODERICK EH, 1978, METAL SEMICONDUCTOR, P73

[9] TOVE PA, 1970, PHYS STAT SOL A, V51, P491

[1] ANDERSSON LP, 1977, VACCUUM, V28, P5

[2] Brodsky M. H., 1975, Critical Reviews in Solid State Sciences, V5, P591, DOI 10.1080/10408437508243516

[3] DOHLER GH, P C TETRAHEDRICALLY, P351

[4] Fuhs W., 1974, P INT C TETRAHEDRALL, P345

[5] INVESTIGATIONS OF METAL CONTACTS TO AMORPHOUS EVAPORATED GE FILMS [J]. VACUUM, 1977, 27 (03) : 193 - 195

[6] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50

[7] BEHAVIOR OF AMORPHOUS-GE CONTACTS TO MONOCRYSTALLINE SILICON [J]. VACUUM, 1977, 27 (03) : 201 - 208

[8] RHODERICK EH, 1978, METAL SEMICONDUCTOR, P73

[9] TOVE PA, 1970, PHYS STAT SOL A, V51, P491